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| www..com E L E C T R O N I C RTM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. RTM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o o Symbol VDS VGS ID IDM PD Limit - 20V 8 - 2.3 - 10 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rja Limit 5 100 Unit S o C/W http:// www.sirectsemi.com www..com RTM2301 Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -2.8A VGS = - 2.5V, ID = -2.0A VDS = VGS, ID = - 250uA VDS = - 16V, VGS = 0V VGS = 8V, VDS = 0V VDS - 10V, VGS = -5V VDS = - 5V, ID = - 2.8A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs - 20 --- 0.45 ---6 -- -95 122 ----6.5 -130 190 -- 1.0 100 --- V m V uA nA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.6A, VGS = 0V IS VSD ---- 0.8 - 1.6 - 1.2 A V VDS = - 6V, VGS = 0V, f = 1.0MHz VDD = - 6V, RL = 6, ID = - 1A, VGEN = - 4.5V, RG = 6 VDS = - 6V, ID = - 2.8A, VGS = - 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------5.4 0.8 1.1 5 19 95 65 447 127 80 10 --25 60 110 80 ---pF nS nC Note : pulse test: pulse width <=300uS, duty cycle <=2% http:// www.sirectsemi.com www..com RTM2301 Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) http:// www.sirectsemi.com www..com RTM2301 Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) SOT-23 Mechanical Drawing A B F SOT-23 DIMENSION DIM A B C D E F G MILLIMETERS MIN 2.88 0.39 1.78 0.51 1.59 1.04 0.07 MAX 2.91 0.42 2.03 0.61 1.66 1.08 0.09 INCHES MIN 0.113 0.015 0.070 0.020 0.063 0.041 0.003 MAX 0.115 0.017 0.080 0.024 0.065 0.043 0.004 E G D C Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com ...Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com http:// www.sirectsemi.com |
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